EPC Space a family of enhancement mode gallium nitride FETs and ICs have been specifically designed for critical applications in the high reliability or commercial satellite space environments.
These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values.
GaN power transistors and ICs are the best choice for power conversion applications in space-based systems. EPC’s GaN devices in packaged form from EPC Space offer dramatically improved performance over the aging rad hard silicon MOSFET. GaN technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. EPC’s GaN devices exhibit superior radiation tolerance compared with silicon MOSFETs.
Rad Hard GaN Packaged Discretes
Every day, leading organizations like NASA, Lockheed Martin, Boeing, the United States Air Force, and many more depend on VPT’s power solutions delivered in a fast timeframe, with the highest certified quality, at a comfortable cost.
VPT creates products and services for demanding environments according to the highest industry standards, carrying MIL-PRF-38534 Class H&K, ISO 9001, and many other facility certifications. Our qualified products are available in a variety of screening levels to meet specific application needs in addition to qualified radiation hardened and radiation tolerant levels specifically designed for space environments.
Whether on the ground, in the air, or beyond, VPT’s products are designed and proven for the challenge of critical mission duty.
Rad Hard GaN Die on Ceramic Adaptor
The CDA series of eGaN® switching power HEMTs from EPC Space have been specifically designed for critical applications in high reliability or commercial satellite space environments. The die adaptor series allows easy PCB mounting for ‘plug and play’ functionality. The low RDS(on) and very low gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical space borne missions
Rad Hard GaN Drivers and Power Stages
EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.
Flight Heritage: Thousands of EPC Space Rad Hard GaN devices have been in orbit since January of 2019